Film growth and electrical properties of solution processed zinc oxide in thin film transistors

  • High performance TFTs showing excellent stability even in air were developed based on investigations describing physical and chemical mechanisms related to zinc oxide film growth and its electrical properties. Therefore the growth and nucleation of zinc oxide thin films deposited by pulsed spray pyrolysis utilizing non-toxic materials were correlated to the boiling curve and Leidenfrost effect of water which was employed as solvent. The optimized deposition parameters were utilized to fabricate ZnO-TFTs. Different growth conditions and their impact on trap state formation inside the bulk material were analyzed taking chemical purity and grain boundary models into account. Moreover it was distinguished between the contribution of surface and bulk trap state on the storage and gate bias stress stability in different atmospheres. Mainly surface states which are sensitive to humid atmosphere show significant impact on the electrical stability of TFTs. Hence different fluoro-terminated compounds which bind selective on active surface sites which are either related to Zn2+-ions or hydroxyl-groups were investigated. 4,4,4-Trifluoro-1-phenylbutane-1,3-dione which chalets to Zn2+-ions was found to be a suitable candidate to reduce the number of surface trap states significantly which leads to highly stable TFT performance and a strong increase in mobility. Since this approach has not been reported elsewhere yet a patent application was filed.

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Publishing Institution:IRC-Library, Information Resource Center der Jacobs University Bremen
Granting Institution:Jacobs Univ.
Author:Marlis Ortel
Referee:Veit Wagner, Dietmar Knipp, Thomas D. Anthopoulos
Advisor:Veit Wagner
Persistent Identifier (URN):urn:nbn:de:101:1-201307119370
Document Type:PhD Thesis
Language:English
Date of Successful Oral Defense:2013/01/28
Date of First Publication:2013/02/27
PhD Degree:Physics
School:SES School of Engineering and Science
Other Countries Involved:United Kingdom
Library of Congress Classification:T Technology / TK Electrical engineering. Electronics. Nuclear engineering / TK7800-8360 Electronics / TK7869-7872 Apparatus and materials / TK7871.85-7871.96 Semiconductors / TK7871.9-7871.96 Transistors / TK7871.96.T45 Thin film
Call No:Thesis 2013/2

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